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  Datasheet File OCR Text:
 Semiconductor
STD123
NPN Silicon Transistor
Features
* * * * * Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA)
Ordering Information
Type NO. STD123 Marking STD123 Package Code TO-92
Outline Dimensions
unit :
mm
PIN Connections 1. Emitter 2. Base 3. Collector
KST-9058-001
1
STD123
Absolute maximum ratings
Characteristic
Collector-Base voltage Collector-Emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Ratings
20 15 6.5 1 625 150 -55~150
Unit
V V V A mW C C
Electrical Characteristics
Characteristic
Collector-base breakdown voltage Collector-Emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON
Test Condition
IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, VIN=0.3V
Min. Typ. Max.
20 15 6.5 150 0.1 260 5 0.6 0.1 0.1 0.3 -
Unit
V V V A A V MHz pF
KST-9058-001
2
STD123
Electrical Characteristic Curves
Fig. 1 VCE(sat)-IC Fig. 1 COb-VCB
Fig. 3 hFE-IC
Fig. 4 RON-IB
KST-9058-001
3


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